Plasma processing apparatus and plasma processing method

Plasma processing apparatus and plasma processing method

  • CN 101,853,763 B
  • Filed: 03/16/2010
  • Issued: 07/09/2014
  • Est. Priority Date: 03/31/2009
  • Status: Active Grant
First Claim
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1. a plasma treatment appts, is characterized in that, comprising:

  • Process chamber, it is for accommodating substrate and substrate being implemented to plasma treatment;

    Process gas supply mechanism, it is for the processing gas to supply regulation in above-mentioned process chamber;

    The pair of electrodes of parallel plate-type, it is located in above-mentioned process chamber, is made up of with the upper electrode of the top that is disposed in above-mentioned lower electrode the lower electrode that is also used as the mounting table that loads aforesaid substrate;

    High frequency electric source, it applies High frequency power at least one party to above-mentioned pair of electrodes;

    Adaptation, it carries out impedance matching for the High frequency power to from above-mentioned high frequency electric source, and one side electrode is applied to this High frequency power after impedance matching;

    Control assembly, it carries out will switching to the 1st power and the power power modulation higher than the 2nd power of the 1st power from the High frequency power of above-mentioned high frequency electric source with the constant cycle, and, carry out in the time applying above-mentioned the 1st power and certainly apply in the specified time limit that above-mentioned the 2nd power starts, stop above-mentioned adaptation coupling action shelter control.

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