Memory element and manufacture method thereof and semiconductor storage

Memory element and manufacture method thereof and semiconductor storage

  • CN 101,859,871 A
  • Filed: 03/26/2010
  • Published: 10/13/2010
  • Est. Priority Date: 04/02/2009
  • Status: Active Application
First Claim
Patent Images

1. memory element comprises:

  • First electrode;

    Second electrode, it is formed on and the relative position of described first electrode;

    AndVariable resistance layer, it forms and places between described first electrode and described second electrode;

    Wherein, described first electrode is a tube, and forms on a side opposite with described variable resistance layer than thicker on the side at described variable resistance layer.

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