Reverse-conducting insulated gate bipolar transistor and corresponding manufacturing method

Reverse-conducting insulated gate bipolar transistor and corresponding manufacturing method

  • CN 101,861,651 A
  • Filed: 11/06/2008
  • Published: 10/13/2010
  • Est. Priority Date: 11/14/2007
  • Status: Active Application
First Claim
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1. a method that is used to make reverse-conducting insulated gate bipolar transistor (1) is characterized in thatOn the wafer (13) of first conduction type with first side (131) and second side (132) relative with described first side (131), the part that has unmodified doping in the reverse-conducting insulated gate bipolar transistor of being finished of described wafer (13) constitutes ground floor (2)The 3rd layer (4) of the second layer of second conduction type (3) and at least one first conduction type go up to form in described first side (131), described the 3rd layer (4) by the described second layer (3) around,The 5th electric insulation layer (6) is gone up in described first side (131) and is formed subsequently, and its part covers described at least one the 3rd layer (4), the described second layer (3) and described ground floor (2),Conduct electricity the 4th layer (5,5 '"'"') in upward formation of described first side (131), it is by described layer 5 (6) and described wafer (13) insulation.Described at least one the 3rd layer (4), described the 4th layer (5,5 '"'"') and described layer 5 (6) are adopted to form in such a way and are made them in the described second layer (3) top first opening (16) be formed,First electrically contacts (10) goes up formation in described first side (131), and it directly electrically contacts with the described second layer (3) and described the 3rd layer (4) in described first opening (16),The layer 7 (8) of the layer 6 of at least one second conduction type (7) and at least one first conduction type go up to form in described second side (132), described at least one the 6th and layer 7 (7,8) be arranged alternately in the plane,Second electrically contacts (11) go up to form in described second side (132), itself and described at least one the 6th and layer 7 (7,8) directly electrically contact,And it is characterized in that the described the 4th and layer 5 (5,5 '"'"', 6) form at least one the 9th layer (12,12 '"'"') that forms defect layer of back by go up in described first side (131) use the described at least the 4th and layer 5 (5,6) form by the injection of described first opening (16) ion as first mask (14).

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