Forming method of conductive plug

Forming method of conductive plug

  • CN 101,866,878 A
  • Filed: 04/17/2009
  • Published: 10/20/2010
  • Est. Priority Date: 04/17/2009
  • Status: Active Application
First Claim
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1. the formation method of a conductive plunger is characterized in that, comprising:

  • MOS is provided the unit, and described MOS unit comprises substrate, is positioned at source area, the drain region of substrate, is positioned at the gate regions of substrate surface, is positioned at the interlayer dielectric layer of substrate surface and covering gate polar region;

    The etching interlayer dielectric layer also forms the contact hole that exposes substrate;

    The substrate surface that goes out in contact holes exposing forms unformed layer;

    Carry out ion by described unformed layer to substrate along described contact hole and inject, form high-doped zone;

    To described high-doped zone annealing;

    Use the conductive materials filling contact hole.

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