The manufacture method of semiconductor device, semiconductor device, communication equipment and semiconductor laser

The manufacture method of semiconductor device, semiconductor device, communication equipment and semiconductor laser

  • CN 101,868,888 B
  • Filed: 11/20/2008
  • Issued: 04/13/2016
  • Est. Priority Date: 11/21/2007
  • Status: Active Grant
First Claim
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1. a manufacture method for semiconductor device, the dielectric layer that described semiconductor device comprises semiconductor layer in the structure and piles up on this semiconductor layer, the feature of this manufacture method is, comprising:

  • Semiconductor layer forming step, forms described semiconductor layer;

    Surface treatment step, for the surface of the described semiconductor layer formed in described semiconductor layer forming step, implements the surface treatment for removing residual carbon compound;

    Dielectric film forming step, the surface of implementing surface-treated semiconductor layer in described surface treatment step at least partially, to correspond to the accumulation condition of the surface state after described surface treatment, forms dielectric film;

    WithHeat treatment step, by implementing heat treatment to the described semiconductor layer defining dielectric film in described dielectric film forming step, thus makes the crystalline state in the region at least partially of described semiconductor layer change,Described semiconductor layer is GaAs based semiconductor layer,In described surface treatment step, use sulfuric acid mixture liquid to implement surface treatment, make the contact angle of described surface and water become less than 60 degree,The refractive index of the dielectric film formed in described dielectric film forming step is less than 2.1,Described semiconductor device is semiconductor laser,Described region is at least partially the window area of semiconductor laser,The band gap difference Δ

    Eg of described window area and non-windowed area is greater than 50meV.

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