The manufacture method of integrated CMOS-MEMS device

The manufacture method of integrated CMOS-MEMS device

  • CN 101,870,451 B
  • Filed: 04/22/2010
  • Issued: 08/24/2016
  • Est. Priority Date: 04/24/2009
  • Status: Active Grant
First Claim
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1. the method manufacturing device, comprises the steps:

  • The substrate with front and back is provided;

    Form complementary metal oxide semiconductors (CMOS) cmos device over the substrate;

    AndForm Micro Electro Mechanical System MEMS over the substrate, described in wherein said formationMEMS includes;

    MEMS mechanical structure is formed in the front of described substrate;

    Discharge described MEMS mechanical structure, to form the cavity of described MEMS,Described cavity is provided with at least one movable part;

    Deposit protective layer in the front of described substrate, wherein said protective layer is arranged on described releaseMEMS mechanical structure on and be arranged in described cavity to surround described MEMS mechanical structure;

    AndDescribed protective layer is being arranged the described substrate of the post processing in described MEMS mechanical structureThe back side.

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