Semiconductor thermo-electric generation apparatus

Semiconductor thermo-electric generation apparatus

  • CN 101,882,902 B
  • Filed: 07/20/2010
  • Issued: 12/14/2016
  • Est. Priority Date: N/A
  • Status: Active Grant
First Claim
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1. a semiconductor thermo-electric generation apparatus, including quasiconductor generating element and fin, it is characterised in that also include oneThe first above flat-plate heat pipe, the evaporating surface of described first flat-plate heat pipe is direct or indirect with the cold end face of quasiconductor generating elementThe apparent heat current density of laminating and joint place is more than 10W/cm2, the cryosurface of the first flat-plate heat pipe is provided with fin;

  • Also includeSecond heat pipe, the evaporating surface of described second heat pipe is connected with thermal source, the cryosurface of the second heat pipe and quasiconductor generating elementDirectly or indirectly fit in face, hot junction;

    The heat of thermal source is quickly delivered to the face, hot junction of quasiconductor generating element by the second heat pipe, withTime the first flat-plate heat pipe heat that cold end face produces when being run by quasiconductor generating element distribute in time to ring around through finIn border, described first flat-plate heat pipe and the common cooperating of the second heat pipe are promptly to improve the cold end face of quasiconductor generating elementAnd the temperature difference between face, hot junction.

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