Cmos semiconductor device and its manufacture method

Cmos semiconductor device and its manufacture method

  • CN 101,884,101 B
  • Filed: 11/26/2008
  • Issued: 06/13/2017
  • Est. Priority Date: 12/03/2007
  • Status: Active Grant
First Claim
Patent Images

1. a kind of manufacture method of cmos semiconductor device, the cmos semiconductor device is included as p-type field-effect transistorThe first transistor and the transistor seconds as N-shaped field-effect transistor,The first transistor includes:

  • First grid dielectric film, is arranged on the Part I of semiconductor substrate;

    First grid electricityPole, is arranged on first grid dielectric film,Transistor seconds includes:

    Second grid dielectric film, is arranged on the Part II of semiconductor substrate;

    Second grid electricityPole, is arranged on second grid dielectric film,First and second gate electrodes have the metal level of same metal material,The method includes following operation:

    Be made up of the High-k materials comprising hafnium exhausted is formed at least first and second parts of the semiconductor substrateVelum;

    The first cover with first element different from hafnium is formed on the Part III of the dielectric film;

    With the second element different from first element and hafnium the is formed on the Part IV of the dielectric filmTwo cap rocks;

    The dielectric film is set to be reacted with the first and second cap rocks for being respectively at the third and fourth part by heat treatment, shapeInto the first and second gate insulating films;

    Gate metal material layer is formed on the semiconductor substrate;

    AndGate metal material layer is performed etching in same etching procedure, forms each grid of N-shaped MOSFET and p-type MOSFETElectrode.

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