Oxide semiconductor thin-film transistor

Oxide semiconductor thin-film transistor

  • CN 101,884,110 A
  • Filed: 11/27/2008
  • Published: 11/10/2010
  • Est. Priority Date: 12/04/2007
  • Status: Active Grant
First Claim
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1. thin-film transistor, described thin-film transistor comprises:

  • gate electrode, gate insulation layer, the semiconductor layer that comprises amorphous oxides, source-drain electrode and protective layer, wherein;

    Described semiconductor layer comprisesWith the regional corresponding first area that is formed with described source-drain electrode andNot with the regional corresponding second area that is formed with described source-drain electrode;

    AndAt least described first area comprises the different crystallised component of component of the amorphous oxides in component and the second area.

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