Oxide semiconductor thin-film transistor

Oxide semiconductor thin-film transistor

  • CN 101,884,110 B
  • Filed: 11/27/2008
  • Issued: 11/05/2014
  • Est. Priority Date: 12/04/2007
  • Status: Active Grant
First Claim
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1. a thin-film transistor, described thin-film transistor comprises:

  • gate electrode, gate insulation layer, the amorphous oxide semiconductor layer, source-drain electrode and the protective layer that comprise In, wherein;

    Described source-drain electrode contacts with described amorphous oxide semiconductor layer, andDescribed amorphous oxide semiconductor layer comprisesThe first area corresponding with the region that is formed with described source-drain electrode, andNot corresponding with the region that is formed with described source-drain electrode second area;

    AndAt least described first area comprises crystallization crystal grain, and described crystallization crystal grain has the component of In surplus.

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