Formation method of contact hole

Formation method of contact hole

  • CN 101,894,791 B
  • Filed: 05/18/2009
  • Issued: 03/12/2014
  • Est. Priority Date: 05/18/2009
  • Status: Active Grant
First Claim
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1. a formation method for contact hole, is characterized in that, comprises step:

  • Semiconductor base is provided, and it comprises the etching stop layer on conductive layer, described conductive layer, the interlayer dielectric layer on described etching stop layer;

    Described interlayer dielectric layer is carried out to the first etching, make to form through hole in described interlayer dielectric layer;

    Described etching stop layer is carried out to the second etching, make to form through hole in described etching stop layer, the etching gas of described the second etching comprises;

    CH 2f 2, O 2, N 2, and the fluorine carbon ratio gas that is greater than 2, with in the situation that not affecting etching stop layer etching effect, remove and remain in the interlayer dielectric layer on etching stop layer.

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