Method of producing a semiconductor device

Method of producing a semiconductor device

  • CN 101,901,828 B
  • Filed: 06/19/2006
  • Issued: 10/15/2014
  • Est. Priority Date: 06/20/2005
  • Status: Active Grant
First Claim
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1. a semiconductor device, it comprises silicon substrate, the front surface device architecture in the scope of the first first type surface of silicon substrate and the rear electrode in the scope of the second first type surface of silicon substrate, wherein said rear electrode comprises the aluminium silicon film contacting with the current collection layer being formed on described the second first type surface, the silicon concentration of described aluminium silicon film at 0.5wt% in the scope of 2wt% time, the thickness of described aluminium silicon film is at 0.3 μ

  • m in the scope of 0.6 μ

    m, and described rear electrode is included in the lip-deep buffering metallic film of described aluminium silicon film.

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