Photonic crystal LED

Photonic crystal LED

  • CN 101,904,020 A
  • Filed: 12/12/2008
  • Published: 12/01/2010
  • Est. Priority Date: 12/18/2007
  • Status: Active Application
First Claim
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1. A semiconductor light-emitting-diode (1, LED), comprising:

  • Be used to stride and be arranged between the first kind semiconductor layer (21) and the second type semiconductor layer (30) so that produce first and second electrodes (40 that the active region (4) of light applies voltage,

         11), be used to launch the light-emitting area (6) of described light and be arranged on described light-emitting area (6) and described active region (4) between a plurality of photonic crystals (101,102), it is characterized in that, at described a plurality of photonic crystals (101, the photonic crystal (101 of at least two first and second types of selecting

         102),

         102) be suitable for extracting light and differing from one another aspect at least one lattice parameter from described active region (4), described at least two photonic crystals (101,102) each in and corresponding far field pattern association, described a plurality of photonic crystal (101 wherein is provided,

         102) layout is so that be provided with described at least two photonic crystals (101,102), the feasible far field pattern of passing through the described correspondence of each association in combination and described at least two photonic crystals (101,102) forms the far field pattern from the light of the middle generation of described LED (1).

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