Diffusion barrier and forming method thereof

Diffusion barrier and forming method thereof

  • CN 101,908,501 A
  • Filed: 06/03/2010
  • Published: 12/08/2010
  • Est. Priority Date: 06/03/2009
  • Status: Active Application
First Claim
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1. the method for a formation diffusion barrier that in semiconductor device is made, uses, described method comprises:

  • Above the interlevel dielectric layer of composition, by physical gas-phase deposition, the tantalum base barrier layer that deposition iridium mixes;

    Wherein said barrier layer makes described barrier layer have the non crystalline structure of gained with the iridium concentration deposition of at least 60% atomic wts.

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