Large area nanopatterning method and apparatus

Large area nanopatterning method and apparatus

  • CN 101,911,249 A
  • Filed: 11/18/2008
  • Published: 12/08/2010
  • Est. Priority Date: 01/22/2008
  • Status: Active Application
First Claim
Patent Images

1. the method for a near-field nanometer photoetching comprises:

  • A) provide substrate, described substrate has the radiation-sensitive layer on described substrate surface;

    B) provide rotatable mask, described rotatable mask has the nano-pattern on the outer surface of described rotatable mask;

    C) described nano-pattern is contacted with described radiation-sensitive layer on the described substrate surface;

    When d) described rotatable mask being rotated on described radiation-sensitive layer, with radiation profiles, in described radiation-sensitive layer, create thus and have scope from less than the image of 1 μ

    m down to the characteristic size of about 1nm by described nano-pattern.

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