SOIMOS (Silicon on Insulator Metal Oxide Semiconductor) device with BTS (Bodied Tied to Source) structure and manufacture method thereof

SOIMOS (Silicon on Insulator Metal Oxide Semiconductor) device with BTS (Bodied Tied to Source) structure and manufacture method thereof

  • CN 101,916,776 A
  • Filed: 07/13/2010
  • Published: 12/15/2010
  • Est. Priority Date: 07/13/2010
  • Status: Active Application
First Claim
Patent Images

1. the SOIMOS device with BTS structure is characterized in that, comprising:

  • substrate, be positioned at insulating buried layer on the described substrate, be positioned at the active area on the described insulating buried layer and be positioned at fleet plough groove isolation structure around the described active area;

    Described active area comprises;

    the grid region, be positioned at the tagma under the described grid region, the N type source region that is positioned at two ends, described tagma and N type drain region;

    Be provided with the side wall isolation structure around in described grid region;

    Described N type source region comprises;

    two heavy doping N type districts, the heavy doping p type island region between described two heavy doping N type districts, be positioned on described two heavy doping N type districts and the heavy doping p type island region and with their contacted silicides and the shallow N type district that links to each other with described silicide;

    Described heavy doping p type island region and described two heavy doping N type districts, fleet plough groove isolation structure, tagma with and on silicide contact.

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