The method of semiconductor device and manufacture semiconductor device

The method of semiconductor device and manufacture semiconductor device

  • CN 101,924,094 B
  • Filed: 04/23/2010
  • Issued: 03/09/2016
  • Est. Priority Date: 04/24/2009
  • Status: Active Grant
First Claim
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1. a semiconductor device, comprising:

  • First insulating barrier;

    Interconnection, described interconnection to be provided in described first insulating barrier and to have the upper surface higher than the upper surface of described first insulating barrier;

    Air gap, described air gap is provided between described interconnection and described first insulating barrier;

    Second insulating barrier, described second insulating barrier is at least formed on the top of described first insulating barrier and described air gap;

    Etch stop film, described etch stop film is at least formed on the top of described second insulating barrier;

    3rd insulating barrier, described 3rd insulating barrier is formed on the top of described etch stop film;

    AndThrough hole, described through hole to be at least provided in described 3rd insulating barrier and to be connected to described interconnection,Wherein said air gap is formed in described second insulating barrier.

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