Reducing damage to low-k materials during photoresist stripping

Reducing damage to low-k materials during photoresist stripping

  • CN 101,925,984 A
  • Filed: 01/27/2009
  • Published: 12/22/2010
  • Est. Priority Date: 02/01/2008
  • Status: Active Application
First Claim
Patent Images

1. one kind is placing porous low k dielectric layer below the patterned organic mask to form the method for feature, comprises:

  • (a) feature being passed this patterned organic mask is etched in this porous low k dielectric layer;

    And(b) peel off this patterned organic mask, comprise;

    The strip gas that comprises COS is provided;

    Form plasma from this strip gas;

    AndStop this strip gas.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×