Reactive ion etching method for etching silicon

Reactive ion etching method for etching silicon

  • CN 101,928,941 A
  • Filed: 06/23/2009
  • Published: 12/29/2010
  • Est. Priority Date: 06/23/2009
  • Status: Active Grant
First Claim
Patent Images

1. reactive ion etching method that is used for etch silicon, the etching gas that adopts comprises first gas and second gas, described first gas is the gas that contains fluorine element, described second gas is the gas that is used for forming with pasc reaction passivation layer, it is characterized in that, when etching process finishes, stop to feed first gas earlier and stop to feed second gas again.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×