Gallium nitride luminous diode

Gallium nitride luminous diode

CN
  • CN 101,931,036 A
  • Filed: 07/21/2010
  • Published: 12/29/2010
  • Est. Priority Date: 07/21/2010
  • Status: Active Grant
First Claim
Patent Images

1. GaN series LED, it comprises:

  • One substrate;

    One gallium nitride nucleating layer, this gallium nitride nucleating layer is produced on the substrate;

    One resilient coating, this resilient coating are produced on the gallium nitride nucleating layer;

    One n type contact layer, this n type contact layer is produced on the resilient coating, and this n type contact layer is made of n type gallium nitride;

    One active luminescent layer, this activity luminescent layer is produced on the n type contact layer and covers the part surface of described n type contact layer one side, make the opposite side of this n type contact layer form a table top, described active luminescent layer is to be made of the multiply periodic quantum well structure that indium gallium nitrogen thin layer and gallium nitride thin layer interaction cascading form;

    One p type electronic barrier layer, this p type electronic barrier layer is produced on the gallium nitride thin layer of active luminescent layer, and this p type electronic barrier layer is made of aluminum gallium nitride;

    One p type indium gallium nitrogen insert layer, this p type indium gallium nitrogen insert layer is produced on the p type electronic barrier layer;

    One p type contact layer, this p type contact layer are produced on the p type indium gallium nitrogen insert layer, and this p type contact layer is made of p type gallium nitride;

    One negative electrode, this negative electrode are produced on the table top of n type contact layer;

    One positive electrode, this positive electrode are produced on the p type contact layer, finish the making of GaN series LED.

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