STI structure and method of forming bottom void in same

STI structure and method of forming bottom void in same

  • CN 101,950,730 A
  • Filed: 07/08/2010
  • Published: 01/19/2011
  • Est. Priority Date: 07/08/2009
  • Status: Active Application
First Claim
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1. the method in order to the formation fleet plough groove isolation structure is characterized in that, comprises:

  • (a) provide the semiconductor substrate;

    (b) form a groove in this substrate, this groove has a first side wall and second sidewall with respect to this first side wall, and this first side wall and this second sidewall extend downward the bottom of this groove;

    (c) deposition one insulating material is with the laying of the bottom of this first side wall of common formation, this second sidewall and this groove;

    (d) part of the bottom of the top of contiguous this groove and this groove in this insulating material of etch-back;

    (e) continue the laying of this insulating material of deposition with the bottom that forms this first side wall, this second sidewall and this groove, and utilize the speed that is enough to one first outstanding insulating material and one second outstanding insulating material are moved closer to deposit, wherein this first outstanding insulating material is deposited on this first side wall, and this second outstanding insulating material is deposited on this second sidewall;

    And(f) repeating step (d) with (e) so that this first outstanding insulating material and this second outstanding insulating material adjacency, thereby form a hole that is close to this channel bottom.

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