Dwindle EOT by removing boundary layer from the high K/ metal gates of MOS device

Dwindle EOT by removing boundary layer from the high K/ metal gates of MOS device

  • CN 101,958,341 A
  • Filed: 07/13/2010
  • Published: 01/26/2011
  • Est. Priority Date: 07/15/2009
  • Status: Active Application
First Claim
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1. integrated circuit structure comprises:

  • Semiconductor substrate;

    Above described Semiconductor substrate, wherein, there is not boundary layer in the phonon screen substantially between described Semiconductor substrate and described phonon screen;

    The high k dielectric layer is above described phonon screen;

    AndMetal gate layers is above described high k dielectric layer.

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