Biasing circuit and contain its transconductance capacitor filter circuit and semiconductor integrated circuit

Biasing circuit and contain its transconductance capacitor filter circuit and semiconductor integrated circuit

  • CN 101,958,689 A
  • Filed: 01/22/2010
  • Published: 01/26/2011
  • Est. Priority Date: 01/23/2009
  • Status: Active Application
First Claim
Patent Images

1. biasing circuit comprises:

  • Form the first positive channel metal oxide semiconductor transistor of first current source;

    Constitute the current mirroring circuit of the described first positive channel metal oxide semiconductor transistor and form the second positive channel metal oxide semiconductor transistor of second current source;

    The first negative channel metal oxide semiconductor transistor, it has from the drain electrode of described first current source to the drain electrode supply of current of this first negative channel metal oxide semiconductor transistor;

    Constitute the second negative NMOS N-channel MOS N crystal of current mirroring circuit with the described first negative channel metal oxide semiconductor transistor, it has from the drain electrode of described second current source to the drain electrode supply of current of this second negative NMOS N-channel MOS N crystal;

    AndBe connected the source electrode of the described second negative channel metal oxide semiconductor transistor and the resistor between the ground connection;

    Wherein, being used for the impedance compoment that mutual conductance regulates is connected between the source electrode and ground connection of the described first negative channel metal oxide semiconductor transistor.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×