Temperature measurement and control of wafer support in thermal processing chamber

Temperature measurement and control of wafer support in thermal processing chamber

  • CN 101,978,481 A
  • Filed: 03/25/2009
  • Published: 02/16/2011
  • Est. Priority Date: 03/25/2008
  • Status: Active Grant
First Claim
Patent Images

1. the chamber of a treatment substrate, it comprises at least:

  • The chamber envelope is enclosed part, defines and handles the space;

    Substrate support places this processing space;

    Edge ring places on this substrate support, and this edge ring is established with this substrate of peripheral upper support at this substrate;

    First thermal source is established to heat this substrate;

    Second thermal source is established to change the temperature of this edge ring;

    AndHeat group is positioned at contiguous this edge ring place, and this heat group comprises at least one passage, and this passage comprises heating or cools off the fluid of this heat group.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×