Metal-gate structures and manufacture method thereof

Metal-gate structures and manufacture method thereof

  • CN 101,981,673 B
  • Filed: 05/14/2009
  • Issued: 08/03/2016
  • Est. Priority Date: 05/21/2008
  • Status: Active Grant
First Claim
Patent Images

1. a metal-gate structures, including:

  • Substrate;

    Gate-dielectric on substrate;

    The workfunction metal adjacent with described gate-dielectric;

    The gate metal adjacent with described workfunction metal;

    Electric insulation lid placed in the middle on described gate metal;

    On described electric insulation lid and at least partially around the electric insulation layer of described electric insulation lid, described electric insulation layer includes bottom, this bottom directly contacts with described electric insulation lid and has the surface of surface co-planar with described electric insulation lid, and wherein, the described bottom of described electric insulation layer includes low-k dielectric material, and the top of described electric insulation layer is on described electric insulation lid and includes the dielectric material identical with bottom;

    The distance piece adjacent with described gate-dielectric;

    AndDielectric material at least partially around described distance piece.

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