A semiconductor device comprising a metal gate stack of reduced height and method of forming the same

A semiconductor device comprising a metal gate stack of reduced height and method of forming the same

  • CN 101,981,674 A
  • Filed: 02/27/2009
  • Published: 02/23/2011
  • Est. Priority Date: 02/29/2008
  • Status: Active Application
First Claim
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1. method comprises:

  • Form transistorized gate electrode structure (160) on semiconductor layer (102), this gate electrode structure (160) comprises high K value dielectric layer (161), be formed at the metal-containing material (162) on this high K value dielectric layer (161) and be formed at mask material (163) on this metal-containing material (162);

    Utilize this gate electrode structure (160) thus form at this semiconductor layer (102) and drain and source area (152) as injecting mask;

    At least a portion of this mask material (163) of removing this gate electrode structure (160) is to reduce the height of this gate electrode structure;

    AndForm strain inducing dielectric layer (130) on this gate electrode structure of this drain electrode and source area (152) and reduction height (160R), this strain inducing dielectric layer (130) produces strain in this transistorized trench area.

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