Method of forming integrated circuit

Method of forming integrated circuit

  • CN 101,996,872 A
  • Filed: 08/04/2010
  • Published: 03/30/2011
  • Est. Priority Date: 08/14/2009
  • Status: Active Application
First Claim
Patent Images

1. the formation method of an integrated circuit comprises the following steps:

  • Semiconductor wafer is provided;

    AndUtilize a low temperature injection technology to inject this semiconductor substrate, to form an injection region.

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