Method for forming metal interconnecting layer

Method for forming metal interconnecting layer

  • CN 101,996,924 A
  • Filed: 08/11/2009
  • Published: 03/30/2011
  • Est. Priority Date: 08/11/2009
  • Status: Active Application
First Claim
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1. method that forms metal interconnecting layer comprises:

  • In reaction chamber, carry out and on the insulating barrier of Semiconductor substrate, form groove and connecting hole, and on the bottom and sidewall of groove, form the lamination barrier film on the bottom of connecting hole and the sidewall;

    Form the displacement metal level on the surface of described lamination barrier film;

    After taking out in the described reaction chamber described displacement is replaced into metallic copper with metal level, forms the copper electrodeposited coating on the surface of described metallic copper.

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