Semiconductor device and method for production of semiconductor device

Semiconductor device and method for production of semiconductor device

  • CN 101,996,956 A
  • Filed: 08/17/2010
  • Published: 03/30/2011
  • Est. Priority Date: 08/24/2009
  • Status: Active Application
First Claim
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1. semiconductor device comprises:

  • Substrate;

    Dielectric layer is in a side of described substrate;

    Pad is in the groove of described dielectric layer;

    AndDistribution is connected to described pad,Wherein, the zone of the top surface that exposes at least of described pad is lower than the diffusible metal material manufacturing of described distribution in insulating barrier by the diffusivity in insulating barrier, andDescribed insulating barrier is formed on another substrate, and described insulating barrier is adjacent with the described dielectric layer that wherein includes described pad.

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