A method of manufacturing a gas electron multiplier

A method of manufacturing a gas electron multiplier

  • CN 102,007,566 B
  • Filed: 04/14/2008
  • Issued: 05/20/2015
  • Est. Priority Date: 04/14/2008
  • Status: Active Grant
First Claim
Patent Images

1. one kind manufactures the method for gas electron multiplier (10), described gas electron multiplier comprises insulating trip (12), the first metal layer (14) and the second metal level (16) and multiple through hole, described insulating trip (12) has first surface and second surface, described the first metal layer (14) and described second metal level (16) are separately positioned on the top of described first surface and described second surface, described multiple through hole extends through described insulating trip (12) and described the first metal layer (14) and described second metal level (16), described method comprises the following steps:

  • Prepare plate (28), described plate (28) comprises insulating trip (12), described insulating trip (12) is provided with the first metal layer (14) and the second metal level (16) respectively on its first surface and second surface, and described the first metal layer (14) and described second metal level (16) have original depth;

    The first metal layer hole forming step, wherein only carries out composition to described the first metal layer (14), to form the hole (18) through described the first metal layer (14) by photoetching;

    Insulating trip hole forming step, wherein by etching from the side of described first surface, makes the described hole (18) formed in described the first metal layer (14) extend through described insulating barrier (12);

    AndSecond metal level hole forming step, described the first metal layer (14) and described second metal level (16) is wherein etched from outside, thus reduce the described original depth of described the first metal layer (14) and described second metal level (16), etch described second metal level (16) by the described hole (18) in described the first metal layer (14) and described insulating trip (12) simultaneously, keep etching, until described hole (18) extend through described second metal levelWherein, the described initial average thickness of described the first metal layer and described second metal level (14,16) is 6.5 μ

    m ~ 25 μ

    m.

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