Semiconductor device and making method thereof

Semiconductor device and making method thereof

  • CN 102,013,437 B
  • Filed: 09/07/2009
  • Issued: 11/05/2014
  • Est. Priority Date: 09/07/2009
  • Status: Active Grant
First Claim
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1. a semiconductor device, comprising:

  • Semiconductor layer on substrate;

    Separator on above-mentioned semiconductor layer;

    The source electrode and the drain electrode that contact with above-mentioned semiconductor layer, each of this source electrode and drain electrode comprises a plurality of fingers, and a plurality of fingers of above-mentioned source electrode and a plurality of fingers of above-mentioned drain electrode intersect mutually;

    AndGrid on above-mentioned separator, this grid above-mentioned source electrode and drain electrode between and comprise around the closed-loop structure of above-mentioned a plurality of fingers of above-mentioned source electrode and drain electrode;

    Wherein, the head and the tail of above-mentioned grid are connected by interconnection line, and a plurality of corners corresponding to tips above-mentioned grid and a plurality of fingers above-mentioned drain electrode cross over above-mentioned source electrode by air bridges and are connected to grid lead pad, or are connected to grid lead pad by interconnection line.

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