Method for manufacturing aluminum-containing nitride intermediate layer, method for manufacturing nitride layer, and method for manufacturing nitride semiconductor element
Method for manufacturing aluminum-containing nitride intermediate layer, method for manufacturing nitride layer, and method for manufacturing nitride semiconductor element
- CN 102,024,887 A
- Filed: 09/13/2010
- Published: 04/20/2011
- Est. Priority Date: 09/11/2009
- Status: Active Application
- EN CH
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