Method for manufacturing aluminum-containing nitride intermediate layer, method for manufacturing nitride layer, and method for manufacturing nitride semiconductor element

Method for manufacturing aluminum-containing nitride intermediate layer, method for manufacturing nitride layer, and method for manufacturing nitride semiconductor element

  • CN 102,024,887 A
  • Filed: 09/13/2010
  • Published: 04/20/2011
  • Est. Priority Date: 09/11/2009
  • Status: Active Application
First Claim
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1. a manufacture method that contains the nitride intermediate layer of aluminium is characterized in that, comprising:

  • substrate and the target electrode that contains aluminium separate operation that the distance below the above 250mm of 100mm disposes,Apply the DC magnetron sputtering method that voltage carries out and on described substrate surface, form the operation in the nitride intermediate layer of containing aluminium by between described substrate and described target electrode, utilizing in continuous DC mode.

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