Method for manufacturing transistor with lightly doped drain structure

Method for manufacturing transistor with lightly doped drain structure

  • CN 102,034,711 A
  • Filed: 09/25/2009
  • Published: 04/27/2011
  • Est. Priority Date: 09/25/2009
  • Status: Active Application
First Claim
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1. transistorized manufacture method with lightly doped drain structure, described method comprises the following steps:

  • On substrate, form grid oxic horizon and grid;

    , carry out ion and inject the formation lightly doped drain as mask with described grid;

    Forming the clearance wall insulating barrier on the sidewall of described grid oxic horizon and described grid and on the substrate;

    On described clearance wall insulating barrier, form a gap parietal layer;

    Described clearance wall insulating barrier of dry etching and gap parietal layer form clearance wall with the sidewall at grid, and the etching gas of described dry etching comprises HBr and CF 4Crystal column surface is cleaned, remove the residue in the etching step;

    , carry out ion and inject and form source electrode and drain electrode as mask with described grid and described clearance wall.

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