Reduce the plasma-etching method of micro-loading

Reduce the plasma-etching method of micro-loading

  • CN 102,044,410 B
  • Filed: 07/26/2010
  • Issued: 11/25/2015
  • Est. Priority Date: 07/27/2009
  • Status: Active Grant
First Claim
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1. produce a method for the multiple etch features in electronic device, the method comprises:

  • The first time-division plasma etch process step is performed so that the plurality of etch features is etched into first degree of depth in plasma chamber;

    Stop described first time-division plasma etch process step;

    The etchant gasses of these plasma indoor emptying;

    After the etchant gasses of these plasma indoor emptying, perform flash process step does not need to be formed at described multiple etch features oxide oxidation step with the exposed surface removing polymer from the plurality of etch features, wherein this flash process step performs when not being biased voltage to the undercoat comprising the plurality of etch features;

    Stop described flash process step;

    The flash process gas of these plasma indoor emptying;

    The second time-division plasma etch process step is performed so that the plurality of etch features is etched into second degree of depth in this plasma chamber;

    AndDetermine whether to reach final etch depth, if not, then perform extra time-division plasma etch process step and flash process step, if so, then the method terminates,Wherein said flash process step is performed when not using oxygen.

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