Interconnecting structure and forming method thereof

Interconnecting structure and forming method thereof

  • CN 102,044,524 A
  • Filed: 10/13/2009
  • Published: 05/04/2011
  • Est. Priority Date: 10/13/2009
  • Status: Active Application
First Claim
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1. an interconnection structure is characterized in that, comprising:

  • The semiconductor-based end;

    Be positioned at suprabasil at least two first metal gaskets of described semiconductor;

    First carbon nano-tube between first metal gasket that needs connect is used to be electrically connected first metal gasket that described needs connect.

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