Semiconductor device

Semiconductor device

  • CN 102,044,565 A
  • Filed: 08/30/2010
  • Published: 05/04/2011
  • Est. Priority Date: 10/20/2009
  • Status: Active Application
First Claim
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1. semiconductor device is characterized in that having:

  • Base layer has first conductivity type;

    Source layer is formed on the described base layer, and has second conductivity type;

    Dielectric film is formed on the described source layer;

    A plurality of grid structures connect described base layer;

    A plurality of conductive parts connect described dielectric film and described source layer, and are electrically connected with described source layer and described base layer;

    AndSource electrode is formed on the described dielectric film, and is electrically connected with described conductive part,Described grid structure forms striated in vertical view,The part that described conductive part is connected with described base layer separates with this grid structure between described grid structure in vertical view, and forms abreast with the direction of the described striated of this grid structure,The part that described source layer between described grid structure and the described conductive part contacts with described base layer is of a size of more than the 0.36 μ

    m and below the 0.43 μ


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