Semiconductor making method and system

Semiconductor making method and system

  • CN 102,063,063 B
  • Filed: 09/16/2010
  • Issued: 07/06/2016
  • Est. Priority Date: 11/11/2009
  • Status: Active Grant
First Claim
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1. a semiconductor making method, including:

  • Thering is provided the product data of a product, these product data include a sensitive product parameter;

    Both product had been deposited to go out Related product from both depositing product identification through an iterative program search according to this sensitive product parameter, wherein this search action is from finding this Related product with same recipe, and the pattern density difference of the pattern density of this Related product and this product starts less than the product of both depositing of an initial pattern density density variation;

    The corresponding data using this Related product judges that the one of this new product processes an initial value of model parameter;

    This initial value of this process model parameter is assigned to relevant to a fabrication schedule and processes model;

    This process model is used to adjust a treatment formulations;

    AndUse this treatment formulations that semiconductor wafer performs this fabrication schedule;

    Wherein the judgement of this initial value includes;

    had multiple Related product identified if this both having been deposited when product is searched, then applies an average program;

    Wherein this process model parameter is according to awarding factor before multiple and multiple parameter is determined, awards factor and includes with this parameter;

    the critical size of wire pattern, film thickness and sectional drawing before this;

    AndThis initial value of this process model parameter is equal to the average of the process model parameter at all identified Related products or weighted average.

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