Method for manufacturing medium/nitride composite structure enhanced field effect transistor

Method for manufacturing medium/nitride composite structure enhanced field effect transistor

  • CN 102,064,108 A
  • Filed: 11/12/2010
  • Published: 05/18/2011
  • Est. Priority Date: 11/12/2010
  • Status: Active Grant
First Claim
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1. method of making medium/nitride composite construction enhancement mode field effect transistor is characterized in that this method comprises following processing step:

  • One, the AlGaN resilient coating of on substrate, growing successively, GaN channel layer, AlN insert layer, AlGaN barrier layer and AlInN cap layer;

    Two, growing GaN channel layer on the AlGaN resilient coating constitutes back of the body potential barrier and improves the raceway groove pinch-off behavior, and the field effect transistor threshold voltage is shuffled;

    Three, the AlInN layer of growth and GaN lattice match on thin AlGaN barrier layer utilizes polarization charge on the AlInN/AlGaN heterogeneous interface to increase electron gas density in the following GaN channel layer.Utilize the rank of being with on this heterogeneous interface to set up high potential barrier, prevent that the electron wave function in the channel layer is penetrated into barrier layer, the strengthening electronic two-dimensional characteristics improves electron mobility;

    Be built into outer raceway groove trap, improve electron gas density and mobility in the raceway groove trap, reduce outer raceway groove series resistance and ohmic contact resistance;

    Four, corrode behind AlInN cap layer 6 and the attenuate AlGaN barrier layer with the direct deposit Si on the AlGaN of attenuate barrier layer of atomic layer deposition (ALD) technology with dry process 3N 4Dielectric layer Si 3N 4/ AlGaN heterojunction forms high potential barrier, the raceway groove trap of raceway groove in constructing;

    Five, use fluoro plasma technology at Si 3N 4Introduce the high density negative electrical charge in the layer, the two-dimensional electron gas in exhausting with strong negative electrical charge in the raceway groove trap, raceway groove pinch off under zero grid voltage is opened under positive grid voltage in making, and realizes enhancement mode work, the Si of optimal design fluoro plasma PROCESS FOR TREATMENT 3N 4/ AlGaN makes up potential barrier, prevents that the raceway groove under the big positive grid voltage can be with distortion, increases channel current.

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