Semiconductor structure and forming method thereof

Semiconductor structure and forming method thereof

  • CN 102,064,186 A
  • Filed: 11/15/2010
  • Published: 05/18/2011
  • Est. Priority Date: 11/15/2010
  • Status: Active Application
First Claim
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1. a semiconductor structure is characterized in that, comprising:

  • First semiconductive material substrate;

    Be formed on first porous structure layer on the described first semiconductive material substrate top layer;

    Be formed on second porous structure layer on described first porous structure layer, wherein, porosity in described second porous structure layer and aperture are all less than porosity and aperture in described first porous structure layer;

    Be formed on the patterned structures layer on described second porous structure layer;

    WithBe formed on second semiconductor material layer on the described patterned structures layer.

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