A kind of intraconnections with pliability dielectric layer

A kind of intraconnections with pliability dielectric layer

  • CN 102,074,549 B
  • Filed: 04/19/2010
  • Issued: 03/30/2016
  • Est. Priority Date: 11/19/2009
  • Status: Active Grant
First Claim
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1. there is an intraconnections for pliability dielectric layer, it is characterized in that, comprising:

  • Multiple dielectric layer is formed on the semiconductor substrate that is covered in and at least comprises a driving component, and the plurality of dielectric layer comprises the dielectric material that dielectric constant is less than 3.0;

    At least one first inner metal dielectric layer is on the plurality of dielectric layer, this at least one first inner metal dielectric layer comprises one first interlayer hole formed by electric conducting material, this first inner metal dielectric layer formed by a polymeric material, this polymeric material is polyimides, the elastic modulus G reatT.GreaT.GT 3Gpa of this polymeric material, the thermal coefficient of expansion of this polymeric material is less than 25ppm/ DEG C;

    AndAt least one second inner metal dielectric layer is on this at least one first inner metal dielectric layer, this at least one second inner metal dielectric layer comprises one first wire that one first irrigation canals and ditches that are filled with electric conducting material are formed, this first wire and the first interlayer hole are electrically connected, this at least one second inner metal dielectric layer formed by non-impurity-doped silicate glasses, and this at least one second inner metal dielectric layer first inner metal dielectric layer more at least one than this is applicable to polishing.

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