Access memory devices, MRAM cell and manufacturing methods thereof

Access memory devices, MRAM cell and manufacturing methods thereof

  • CN 102,074,649 A
  • Filed: 02/22/2010
  • Published: 05/25/2011
  • Est. Priority Date: 11/25/2009
  • Status: Active Application
First Claim
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1. the memory cell of a magnetic RAM comprises:

  • One switches element, comprises one source pole, a grid and a drain electrode;

    AndOne magnetic tunnel knot element comprises a free layer, a fixed bed and a separator, and wherein this separator is folded between this free layer and this fixed bed;

    Wherein the free layer of this magnetic tunnel knot element is connected with the drain electrode of this switching device, and the fixed bed of this magnetic tunnel knot element is connected with a bit line, and the grid of this switching device is connected with a character line, and the source electrode of this switching device is connected with a sense wire.

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