Method for re-oxidizing grid and method for manufacturing semiconductor structure

Method for re-oxidizing grid and method for manufacturing semiconductor structure

  • CN 102,087,966 A
  • Filed: 12/04/2009
  • Published: 06/08/2011
  • Est. Priority Date: 12/04/2009
  • Status: Active Application
First Claim
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1. gate re-ox method, comprise:

  • behind patterned gate electrode layer and gate dielectric formation gate stack structure, carry out oxidation technology, form oxide layer at gate stack structure and substrate surface, it is characterized in that, described oxidation technology adopts the pure oxygen gas atmosphere, and the temperature of described oxidation technology is less than or equal to 800 ℃

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