Metal interconnecting method

Metal interconnecting method

  • CN 102,097,363 A
  • Filed: 12/15/2009
  • Published: 06/15/2011
  • Est. Priority Date: 12/15/2009
  • Status: Active Application
First Claim
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1. metal interconnected method, this method comprises:

  • deposit first dielectric layer and second dielectric layer on metal level successively;

    Second dielectric layer is carried out etching, in second dielectric layer, form groove;

    First dielectric layer is carried out etching, in first dielectric layer, form through hole;

    Deposition diffusion impervious layer and copper seed layer is characterized in that this method also comprises;

    Adopt electrochemistry depositing process ECP growing metal copper;

    Surface at metallic copper generates albronze, cupromanganese or Kufil.

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