Manufacturing method of semiconductor device

Manufacturing method of semiconductor device

  • CN 102,097,365 A
  • Filed: 09/28/2005
  • Published: 06/15/2011
  • Est. Priority Date: 09/29/2004
  • Status: Active Application
First Claim
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1. method of making semiconductor device comprises:

  • Form a plurality of sandwich constructions, wherein sequentially stacked aluminiferous metals film, TiN film and SiON film, the film thickness of wherein said SiON film is less than the film thickness of described TiN film;

    On described sandwich construction, form SiO 2Film;

    By with identical etching gas with a described SiO of step etching 2Film, described SiON film and described TiN film are made opening, and this opening runs through described SiO 2Film and described SiON film, the end of this opening is arranged in described TiN film, and wherein said etching gas comprises by general formula C xF yThe expression fluorocarbon, wherein x be 4 or above real number and y be arithmetic number;

    And Form conductive plug by form conductive film in described opening, the end face of this conductive plug is arranged in described TiN film,The step of wherein said manufacturing opening comprises by described SiO is set 2Etching selection rate between film and the described SiON film is 15 or 20 to carry out etching.

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