Manufacture the method for semiconductor device

Manufacture the method for semiconductor device

  • CN 102,097,365 B
  • Filed: 09/28/2005
  • Issued: 09/16/2015
  • Est. Priority Date: 09/29/2004
  • Status: Active Grant
First Claim
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1. manufacture a method for semiconductor device, comprising:

  • Form multiple sandwich construction, wherein sequentially stacked aluminiferous metals film, TiN film and the SiON film as etching regulation film, the film thickness scope of wherein said SiON film is 10nm or more to 50nm or following, and the film thickness scope of described TiN film is 75nm or more to 200nm or following;

    Described sandwich construction forms SiO 2film;

    By etching described SiO with identical etching gas with a step 2film, described SiON film and described TiN film, manufacture opening, this opening runs through described SiO 2film and described SiON film, the end of this opening is arranged in described TiN film, and wherein said etching gas comprises by general formula C xf ythe fluorocarbon represented, wherein x is the real number of 4 or more and y is arithmetic number;

    And Form conductive plug by forming conductive film in said opening, the end face of this conductive plug is arranged in described TiN film,The step of wherein said manufacture opening comprises by arranging described SiO 2etching selection rate between film and described SiON film is 15 or 20 to etch.

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