Compound semiconductor substrate, semiconductor device, and process for producing semiconductor device

Compound semiconductor substrate, semiconductor device, and process for producing semiconductor device

  • CN 102,112,666 A
  • Filed: 01/26/2009
  • Published: 06/29/2011
  • Est. Priority Date: 01/19/2009
  • Status: Active Application
First Claim
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1. compound semiconductor substrate, it is made of the III group-III nitride and the surface has upper layer, contains with Cl in this upper layer to be scaled 200 * 10 10Individual/cm 2More than and 12000 * 10 10Individual/cm 2Following muriate and be scaled more than the 3.0 atom % and the oxide compound below the 15.0 atom % with O.

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