Fabrication method of shallow trench isolation (STI) structure

Fabrication method of shallow trench isolation (STI) structure

  • CN 102,122,630 A
  • Filed: 01/08/2010
  • Published: 07/13/2011
  • Est. Priority Date: 01/08/2010
  • Status: Active Application
First Claim
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1. the manufacture method of a fleet plough groove isolation structure is characterized in that, comprising:

  • Semiconductor substrate is provided, on described Semiconductor substrate, is formed with cushion oxide layer, silicon nitride layer and shallow trench successively;

    In described shallow trench, form the substrate oxide layer;

    On described substrate oxide layer, be formed for filling the filling oxide layer of shallow trench;

    The filling oxide layer of removing part is until exposing described silicon nitride layer;

    At least described filling oxide layer being carried out the nitrogen ion injects;

    Remove described silicon nitride layer and the described filling oxide layer that is injected with the part of nitrogen ion;

    Remove described cushion oxide layer.

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