Semiconductor device with isolation trench liner, and related fabrication methods

Semiconductor device with isolation trench liner, and related fabrication methods

  • CN 102,132,397 A
  • Filed: 08/10/2009
  • Published: 07/20/2011
  • Est. Priority Date: 08/27/2008
  • Status: Active Application
First Claim
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1. method of making semiconductor device structure (300), this method comprises:

  • The have semi-conducting material substrate (200) of (202) is provided;

    In described semi-conducting material (202), form isolated groove (212);

    With suppressing the described isolated groove of gasket material (214) liner (212) that high k material forms basically in the above, the groove (216) behind the generation liner;

    With the groove (216) behind the partially filled at least described liner of insulating material (218);

    AndForm high k grid material (232) layer of at least a portion that covers described insulating material (218) and at least a portion that covers described semi-conducting material (202), thereby described high k grid material (232) layer by described gasket material (214) separately.

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