Field effect transistor, display element, image display device, and system

Field effect transistor, display element, image display device, and system

  • CN 102,132,413 A
  • Filed: 08/13/2009
  • Published: 07/20/2011
  • Est. Priority Date: 08/20/2008
  • Status: Active Application
First Claim
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1. field-effect transistor comprises:

  • Gate electrode applies grid voltage to it;

    Source electrode and drain electrode are used to obtain the electric current in response to described grid voltage;

    Active layer, contiguous described source electrode and drain electrode provide, and by comprising that magnesium and the indium oxide semiconductor as key component forms;

    AndGate insulator provides between described gate electrode and described active layer.

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