Field-effect transistor, display element, image display device and system

Field-effect transistor, display element, image display device and system

  • CN 102,132,413 B
  • Filed: 08/13/2009
  • Issued: 04/27/2016
  • Est. Priority Date: 08/20/2008
  • Status: Active Grant
First Claim
Patent Images

1. a field-effect transistor, comprising:

  • Gate electrode, applies grid voltage to it;

    Source electrode and drain electrode, for obtaining the electric current in response to described grid voltage;

    Active layer, contiguous described source electrode and drain electrode provide;

    AndGate insulator, provides between described gate electrode and described active layer;

    Wherein, described active layer is by comprising MgIn 2o 4oxide semiconductor formed.

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